Black Phosphorus Optoelectronics and Electronics
Abstract: Black phosphorus recently emerged as a promising new 2D material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. It serendipitously bridges the zero-gap graphene and the relatively largebandgap transition metal dichalcogenides such as molybdenum disulphide (MoS2). In this talk, I will first cover the basic properties of few-layer and thin-film black phosphorus, followed by a discussion of progress on black phosphorus mid-infrared photodetectors and high speed transistors. Finally I will present recent results on bandgap tuning in few-layer and thin-film black phosphorus.
Bio: Fengnian Xia received the B.E. degree with highest honor in electronics engineering from Tsinghua University, Beijing, Chinaand Ph.D. degrees in electrical engineering from Princeton University, Princeton, NJ, USA. He joined IBM Thomas J. Watson research center in Yorktown Heights, NY, USA as a postdoc in 2005, and was a Research Staff Member before he started at Yale University in September 2013. Currently he is the Barton L. Weller associate professor in engineering and science at Department of Electrical Engineering. He currently explores the light-matter interaction and quantum transport in low-dimensional materials and also identifies their potential applications in computing, flexible electronics, imaging, optical communications, and energy harvesting.
Professor Xia’s honors include the National Science Foundation CAREER award (2016), the Office of Naval Research Young Investigator Award (2015), the IBM Pat Goldberg Memorial Best Paper Award (2014), the TR35 Award, MIT Technology Review’s Top Young Innovators under 35 (2011), the IBM Corporate Award, that corporation’s highest technical honor (2012), and the designation of Weller Junior Professorship in Engineering and Science by Yale President in October 2015.